FDG326P Datasheet, Fairchild Semiconductor

*
  –1.5 A,
  –20 V. RDS(ON) = 140 mΩ @ VGS =
  –4.5 V RDS(ON) = 180 mΩ @ VGS =
  –2.5 V RDS(ON) = 250 mΩ @ VG.

Features
*
  –1.5 A,
  –20 V. RDS(ON) = 140 mΩ @ VGS =
  –4.5 V RDS(ON) .

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features
*
  –1.5 A,
  –20 V. RDS(ON) = 140 mΩ @ VGS = <.

FDG327N

FDG327NZ

FDG328P

FDG329N

FDG311N

FDG312P

FDG313N

FDG314P

FDG315N

FDG316P

FDG330P

FDG332PZ

FDG361N